The thesis investigates hot carrier relaxation and carrier recombination mechanism of a InN thin film grown on LAO(LiAlO2) substrate with a ultrafast time-resolved photoluminescence apparatus. Carriers were excited with laser pulses of energy 1.5 eV and of pulsewidth 150 fs from a Ti:sapphire laser. The photoexcited carriers relax excessive energy mostly within 10 ps thorough carrier-LO-phonon interaction. The effective carrier-LO-phonon emission times were estimated 197 to 58 fs in the temperature range from 250 to 35 K. The Shockley-Read-Hall coefficient was found around 0.8 ns-1. The Auger recombination was trivial at 35 K and become significant at 250 K. The fitted radiative recombination was much smaller than the theoretical estimate. Both effective carrier-LO-phonon scattering times and the radiative and nonradiative decay rates of the studied m-plane InN were found to be smaller than those of c-plane InN in other reports.

The purpose of this thesis is to find out carrier concentration in nitride semiconductors by micro Raman measurements. We focus on the Raman measurements of two different III-nitride semiconductors doped with Si. First series is narrow band gap InN films with varying carrier concentration (ne). The highest (ne) in this series is 1.9 X 1019 cm-3. The second series is wide band gap GaN films, with highest (ne) of 8.0 X 1019 cm-3.From the room temperature Ramam measurements ,it is observed that the L- LOPCM (lower branch of longitudinal-optical phonon-plasmon coupled modes) depends on the carrier concentration. We focus the further analysis of this result and try to extract the carrier concentration and compare with electrical measurements.

Espectros Raman de super-redes &#948-dopadas, na geometria de retro¬espalhamento, mostram uma estrutura na região do fônon LO que é alargada e deslocada em relação à correspondente linha observada no material intrínseco. Neste trabalho, este fenômeno é teoricamen¬te explicado através do acoplamento de um fônon LO de momento q, propagando-se ao longo da super-rede, com as excitações eletrônicas desse sistema. O deslocamento e o alargamento da linha são obtidos através do cálculo da auto-energia desse fônon, a qual pode ser expressa em termos da função resposta densidade-densidade do gás de elétrons modulado. Efeitos da interação elétron-elétron são tratados através da aproximação das fases aleatórias (RPA). / The Raman spectra of &#948-doping superlattice, in backscattering ge¬ometry, show a structure in the region of the LO phonon which is broadened and shifted in comparison whit the same structure in the intrinsic material. In this work, this phenomena is interpreted as consequence of the coupling of LO xne-phonon of momentum q, along the axis of the superlattice, whit the excitations of the modulate electron gas, that exists in this system. The shift and the broadening of the phonon are calculated as the real and imagi¬nary parts of the phonon self-energy, which in turn is related to the density-density response function of modulate electron gas. Effects of electron-electron interaction are calculated within the Random Phase Approximation (RPA).

Espectros Raman de super-redes &#948-dopadas, na geometria de retro¬espalhamento, mostram uma estrutura na região do fônon LO que é alargada e deslocada em relação à correspondente linha observada no material intrínseco. Neste trabalho, este fenômeno é teoricamen¬te explicado através do acoplamento de um fônon LO de momento q, propagando-se ao longo da super-rede, com as excitações eletrônicas desse sistema. O deslocamento e o alargamento da linha são obtidos através do cálculo da auto-energia desse fônon, a qual pode ser expressa em termos da função resposta densidade-densidade do gás de elétrons modulado. Efeitos da interação elétron-elétron são tratados através da aproximação das fases aleatórias (RPA). / The Raman spectra of &#948-doping superlattice, in backscattering ge¬ometry, show a structure in the region of the LO phonon which is broadened and shifted in comparison whit the same structure in the intrinsic material. In this work, this phenomena is interpreted as consequence of the coupling of LO xne-phonon of momentum q, along the axis of the superlattice, whit the excitations of the modulate electron gas, that exists in this system. The shift and the broadening of the phonon are calculated as the real and imagi¬nary parts of the phonon self-energy, which in turn is related to the density-density response function of modulate electron gas. Effects of electron-electron interaction are calculated within the Random Phase Approximation (RPA).

Film thickness, free carrier concentration and free carrier mobility are critical figures of merit for silicon carbide epitaxial growth. Room temperature Fourier Transform Infrared (FTIR) reflection spectroscopy can estimate these parameters non-destructively and is capable of high-resolution wafer mapping. Commercially available equipment has greatly simplified the application of this technique by coupling a high performance automated spectrometer with model-based data analysis and interpretation based on the personal computer. While powerful numerical techniques run fast and efficient on modern computers, it is essential that low-order, well-conditioned models are needed. The observed reflectance spectrum is the result of reflection and refraction of light at different interfaces due to constructive and destructive interference. The estimation of film thickness and free carrier concentration for single epitaxial layers has been improved by studying the Longitudinal Optical Phonon Plasmon (LPP) coupled modes. However, the addition of multiple layers introduces many degrees of freedom, which complicates parameter extraction. The multiple epitaxial layer stacks studied were intended for Metal Semiconductor Field Effect Transistor (MESFET?s) on both conducting and semi-insulating substrates. The thickness estimation of the n-channel in the MESFET stack on semi-insulating substrate is improved by preconditioning the curve fit for plasma frequency obtained from doping estimation from capacitance voltage profiling or by observing an LPP- peak.

No description available.

Cette thèse est consacrée à l’étude de la dynamique et du transport des phonons via la résolution de l’équation de transport de Boltzmann (ETB) pour les Phonons. Un ‘solveur’ Monte Carlo dédié à la résolution de l’ETB des phonons dans l’espace réciproque, prenant en compte tous les processus d’interactions Normaux et Umklapp à trois-phonons, est proposé. Une prise en compte rigoureuse des lois de conservation de l’énergie et de la quantité de mouvement est entreprise. Des relations de dispersion réalistes, intégrant tous les modes de polarisations, sont considérées. Le calcul des taux d’interactions à trois-phonons de tous les processus Normaux et Umklapp est effectué en utilisant l’approche théorique due à Ridley qui ne nécessite qu’un unique paramètre semi-ajustable pour chaque mode de polarisation, nommément : le coefficient de couplage anharmonique représenté par les constantes de Grüneisen. Les taux d’interactions ainsi calculés ne servent pas uniquement à la résolution de l’ETB des phonons, mais ont permis aussi une analyse complète des canaux de relaxation des phonons longitudinaux optiques de centre de zone. Cette analyse a montré que le canal de Vallée-Bogani est négligeable dans le GaAs, et que vraisemblablement les temps de vie des phonons LO de centre de zone dans l’InAs et le GaSb rapportés dans la littérature sont fortement sous-estimés. Pour la première fois à notre connaissance, un couplage de deux solveurs Monte Carlo indépendants l’un dédié aux porteurs de charges (Thèse E. Tea) et l’autre dédié aux phonons, est effectué. Cela permet d’étudier l’effet des phonons chauds sur le transport des porteurs de charges. Cette étude a montré que l’approximation de temps de relaxation surestime souvent l’effet bottleneck des phonons. Le ‘solveur’ Monte Carlo est étendu pour résoudre l’ETB des phonons dans l’espace réel (en plus de l’espace réciproque), cela a permet d’étudier le transport des phonons et ainsi de la chaleur. La théorie généralisée de Ridley est toujours utilisée avec des particules de simulations qui interagissent les unes avec les autres directement. Les règles de conservation de l’énergie et de la quantité de mouvement sont rigoureusement respectées. L’effet des processus Umklapp sur la quantité de mouvement totale des phonons est fidèlement traduit; tout comme l’effet des interactions sur les directions des phonons, grâce à une procédure prenant en compte les directions vectorielles respectives lors d’une interaction, au lieu, de la distribution aléatoire usuellement utilisée. Les résultats préliminaires montrent la limite de l’équation analytique de conduction de la chaleur. / This work is dedicated to the study of phonon transport and dynamics via the solution of Boltzmann Transport Equation (BTE) for phonons. The Monte Carlo stochastic method is used to solve the phonon BTE. A solution scheme taking into account all the different individual types of Normal and Umklapp processes which respect energy and momentum conservation rules is presented. The use of the common relaxation time approximation is thus avoided. A generalized Ridley theoretical scheme is used instead to calculate three-phonon scattering rates, with the Grüneisen constant as the only adjustable parameter. A method for deriving adequate adjustable anharmonic coupling coefficients is presented. Polarization branches with real nonlinear dispersion relations for transverse or longitudinal optical and acoustic phonons are considered. Zone-center longitudinal optical (LO) phonon lifetimes are extracted from the MC simulations for GaAs, InP, InAs, and GaSb. Decay channels contributions to zone-center LO phonon lifetimes are investigated using the calculated scattering rates. Vallée-Bogani’s channel is found to have a negligible contribution in all studied materials, notably GaAs. A comparison of phonons behavior between the different materials indicates that the previously reported LO phonon lifetimes in InAs and GaSb were quite underestimated in the literature. For the first time, to our knowledge, a coupling of two independent Monte Carlo solvers, one for charge carriers [PhD manuscript, E. TEA], and one for phonons, is undertaken. Hot phonon effect on charge carrier dynamics is studied. It is shown that the relaxation time approximation overestimates the phonon bottleneck effect. The phonon MC solver is extended to solve the phonon’s BTE in real space simultaneously with the reciprocal space, to study phonon and heat transport. Ridley’s generalized theoretical scheme is utilized again with simulation particles interacting directly together. Energy and momentum conservation laws are rigorously implemented. Umklapp processes effect on the total phonon momentum is thoroughly reproduced, as for the anharmonic interactions effect on resulting phonon directions. This is thanks to a procedure taking in consideration the respective vector directions during an interaction, instead of the randomization procedure usually used in literature. Our preliminary results show the limit of the analytic macroscopic heat conduction equation.