The purpose of this thesis is to find out carrier concentration in nitride semiconductors by micro Raman measurements. We focus on the Raman measurements of two different III-nitride semiconductors doped with Si. First series is narrow band gap InN films with varying carrier concentration (ne). The highest (ne) in this series is 1.9 X 1019 cm-3. The second series is wide band gap GaN films, with highest (ne) of 8.0 X 1019 cm-3.From the room temperature Ramam measurements ,it is observed that the L- LOPCM (lower branch of longitudinal-optical phonon-plasmon coupled modes) depends on the carrier concentration. We focus the further analysis of this result and try to extract the carrier concentration and compare with electrical measurements.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0907109-140728 |
| Date | 07 September 2009 |
| Creators | Tu, Yi-Chou |
| Contributors | Tsu-Chiang Yen, Quark Chen, Li-We Tu, Min-Hsiung Tsai, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-140728 |
| Rights | not_available, Copyright information available at source archive |
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