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Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and
after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal
stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO)
showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 ,
−0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After
annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the
offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface.
Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3
studied.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85021
Date28 April 2023
CreatorsFares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S.J.
PublisherIOP Publishing
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation2162-8777, 045001

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