Bipolar transistors employing an MIS junction for the
emitter exhibit the very desirable properties of high
operating frequency and/or high common emitter gains. The
topic of this thesis is to investigate the usefulness of the
MIS bipolar transistor in real applications. The
experimental results show two possible limitations of the
devices. The principal limitation is the inability of these
devices to withstand moderate temperature stressing. The
second limitation is the relatively high emitter series
resistance. The principal degradation mode of these devices
under temperature stressing is suggested to be the reduction
of the thin insulating oxide. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/42013 |
| Date | January 1988 |
| Creators | Szeto, Ngam |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
Page generated in 0.0025 seconds