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Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emittersSzeto, Ngam January 1988 (has links)
Bipolar transistors employing an MIS junction for the
emitter exhibit the very desirable properties of high
operating frequency and/or high common emitter gains. The
topic of this thesis is to investigate the usefulness of the
MIS bipolar transistor in real applications. The
experimental results show two possible limitations of the
devices. The principal limitation is the inability of these
devices to withstand moderate temperature stressing. The
second limitation is the relatively high emitter series
resistance. The principal degradation mode of these devices
under temperature stressing is suggested to be the reduction
of the thin insulating oxide. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
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The mixed-mode reliability stress of Silicon-Germanium heterojunction bipolar transistorsZhu, Chendong 10 January 2007 (has links)
The objective of the dissertation is to combine the recent Mixed-Mode reliability stress studies into a single text. The thesis starts with a review of silicon-germanium heterojunction bipolar transistor fundamentals, development trends, and the conventional reliability stress paths used in industry, after which the new stress path, Mixed-Mode stress, is introduced. Chapter 2 is devoted to an in-depth discussion of damage mechanisms that includes the impact ionization effct and the selfheating effect. Chapter 3 goes onto the impact ionization effect using two-dimensional calibrated MEDICI simulations. Chapter 4 assesses the reliability of SiGe HBTs in extreme temperature environments
by way of comprehensive experiments and MEDICI simulations. A comparison of the device
lifetimes for reverse-EB stress and mixed-mode stress indicates different damage mechanisms
govern these phenomena. The thesis concludes with a summary of the project and suggestions for
future research in chapter 5.
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