Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/
Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain
(APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si
film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains
in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to
the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We
prove that fundamentally no further reduction of the number of domains can be expected for the
given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain
growth.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31228 |
| Date | 14 August 2018 |
| Creators | Khazaka, Rami, Grundmann, Marius, Portail, Marc, Vennéguès, Philippe, Zielinski, Marcin, Chassagne, Thierry, Alquier, Daniel, Michaud, Jean-François |
| Contributors | Université François Rabelais |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0003-6951, 1077-3118, 011608 |
Page generated in 0.0014 seconds