In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, ie to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by volt-ampere characteristics, spectral analysis and by determination of the profile of the internal electric field.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:328667 |
| Date | January 2013 |
| Creators | Pekárek, Jakub |
| Contributors | Belas, Eduard, Doležal, Zdeněk |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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