The low-field magnetoresistance of colossal magnetic thin film can be enhanced by proton implantation.
Compare with the as grown sample, the implantation samples has lower transition temperature and
higher resistivity. By the hall measurement, we can get the carrier type and carrier concentration.
The hall magnetoresistance (MRH) is much greater than the longitude magnetoresistance (MR).
Chapter 1. Introduce experiment purpose and expected results.
Chapter 2. Introduce the basic theorem of colossal magnetic materials.
Chapter 3. The steps of experiment.
Chapter 4. Results and discussion.
Chapter 5. The conclusion.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627100-200132 |
| Date | 27 June 2000 |
| Creators | Wu, Mei-Fang |
| Contributors | Ivo Klik, Timoehy Chi Chow, Min-Hsiung Tsai, Yo-Der Yao, Hsiung Chou |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627100-200132 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0037 seconds