c-BN has been in focus for several years due to its interesting properties. The possibility for large area CVD is a requirement for the realization of these different properties in various applications. Unfortunately, there are at present severe problems in the CVD growth of c-BN. The purpose with this research project has been to theoretically investigate, using DFT calculations, the possibility for a layer-by-layer CVD growth of c-BN. It could be established that, PEALD, using a BF3-H2-NH3-F2 pulse cycle and a diamond substrate, is a promising method for deposition of c-BN films. The gaseous species will decompose in the plasma and form BFx, H, NHx, and F species (x = 0, 1, 2, 3). The H and F radicals will uphold the cubic structure by completely hydrogenate, or fluorinate, the growing surface. However, surface radical sites will appear during the growth process as a result of atomic H, or F, abstraction reactions. The addition of NHx growth species (x = 0, 1, 2) to B radical sites, and BFx growth species (x = 0, 1, 2) to N radical sites, will then result in a continuous growth of c-BN.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:uu-191181 |
| Date | January 2013 |
| Creators | Karlsson, Johan |
| Publisher | Uppsala universitet, Oorganisk kemi, Uppsala |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Doctoral thesis, comprehensive summary, info:eu-repo/semantics/doctoralThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 1651-6214 ; 1012 |
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