Large dense structures like DRAMs (Dynamic Random Access Memory) are particularly susceptible to process variation, which can lead to variable latencies in different memory arrays. However, very little work exists on variation studies in DRAMs. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not impact the overall processor performance. However, emerging technology trends like three-dimensional integration, use of sophisticated memory controllers, and continued scaling of technology node, substantially reduce DRAM access latency. Hence, future technology nodes will see widespread adoption of embedded DRAMs. This makes process variation a critical upcoming challenge in DRAMs that must be addressed in current and forthcoming technology generations. In this paper, techniques for modeling the effect of random, as well as spatial variation, in large DRAM array structures are presented. Sensitivity-based gate level process variation models combined with statistical timing analysis are used to estimate the impact of process variation on the DRAM performance and leakage power. A simulated annealing-based Vth assignment algorithm using adaptive body biasing is proposed in this thesis to improve the yield of DRAM structures. By applying the algorithm on a 1GB DRAM array, an average of 14.66% improvement in the DRAM yield is obtained.
| Identifer | oai:union.ndltd.org:UTAHS/oai:digitalcommons.usu.edu:etd-2388 |
| Date | 01 December 2012 |
| Creators | Desai, Satyajit |
| Publisher | DigitalCommons@USU |
| Source Sets | Utah State University |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | All Graduate Theses and Dissertations |
| Rights | Copyright for this work is held by the author. Transmission or reproduction of materials protected by copyright beyond that allowed by fair use requires the written permission of the copyright owners. Works not in the public domain cannot be commercially exploited without permission of the copyright owner. Responsibility for any use rests exclusively with the user. For more information contact Andrew Wesolek (andrew.wesolek@usu.edu). |
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