Thin films of Teflon AF have been directly patterned by electron-beam lithography without the need for post exposure chemical development. The relationship between pattern depth and exposure dose was found to be linear over a wide range of doses. Pattern depth was also observed to be dependent on initial film thickness. Teflon AF can be directly patterned at doses similar to typical e-beam resists. High resolution features as small as ~200 nm have been resolved. FTIR measurements revealed that CF3 and fluorinated dioxole groups play a significant role in the patterning mechanism. Teflon AF films also exhibited an increase in refractive index upon exposure to the electron-beam. This property has been exploited in waveguiding applications. Waveguides in Teflon AF were patterned using direct electron beam lithography technique. Waveguides were clearly visible to the naked eye. Characterization in the visible region showed evidences of light guiding through the waveguides. However light could not cross the entire chip. Characterization in the infrared region revealed the slab mode even though individual waveguides were not detected.
| Identifer | oai:union.ndltd.org:uky.edu/oai:uknowledge.uky.edu:gradschool_theses-1638 |
| Date | 01 January 2009 |
| Creators | Karre, Vijayasree |
| Publisher | UKnowledge |
| Source Sets | University of Kentucky |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | University of Kentucky Master's Theses |
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