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Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films

Electrical transport in undoped and Ni-, Cr-, and W-doped TiO2 thin films on SrTiO3(001) is modelled
either with the sum of two thermally activated processes with exponential temperature dependence
of conductivity, or with the sum of three-dimensional Mott variable-range hopping
(VRH) and an activated process with low activation energy. The latter is interpreted for both models
as small polaron hopping (<θD/4). According to reduced chi-square values, the double activated
model is superior for data of higher ordered films grown at 540 and 460 °C. For lower growth temperature,
VRH plus activated conductivity fits partly better. For all dopants, n-type conductivity is
observed.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31223
Date14 August 2018
CreatorsKneiß, Max, Jenderka, Marcus, Brachwitz, Kerstin, Lorenz, Michael, Grundmann, Marius
PublisherAmerican Institute of Physics, Universität Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation0003-6951, 1077-3118, 062103

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