We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to
the graphene planes (perpendicular to the c-axis) in oriented graphite ribbons with widths around
500 nm. Our experiments have reproducibly shown a reduction of electrical resistance upon
implantation consistent with the occurrence of ionic channeling in our devices. Our results allow
for new approaches in the modulation of the charge carrier concentration in mesoscopic graphite.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31178 |
| Date | 08 August 2018 |
| Creators | Camargo, B. C., de Jesus, R. F., Semenenko, B. V., Precker, C. E. |
| Publisher | AIP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 244302 |
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