Reliability of sub-micron analog circuits is directly related to impact ionization and
the subsequent changes in threshold voltage and drain current of n-MOSFET devices.
This thesis presents theory of the hot-electron effects on the device characteristics and
circuit performance, explores several approaches to improve performance at both the
device and circuit level, and finally shows a new composite n-MOSFET device which
significantly suppresses substrate current - an indication of hot-electron degradation. By
using the composite device in the output gain stage of a CMOS differential amplifier with
1p.m technology, the normalized substrate current of the n-channel device is reduced by
eight orders of magnitude for a sloping input waveform. The reduction in device substrate
current is achieved at the cost of increased area and reduced frequency response.
Replacing conventional n-channel devices with composite n-MOSFETs provides a
simple way to improve device and circuit reliability without modification of the device
structure and/or fabrication process. / Graduation date: 1993
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/36252 |
| Date | 29 April 1993 |
| Creators | Ge, David Ying |
| Contributors | Forbes, Leonard |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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