by Clive Hau Ming Shiu. / On t.p., "x" and "1-x" are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves [126]-[130]). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / TABLE OF CONTENTS --- p.iii / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter Chapter 2 --- THEORY --- p.3 / Chapter 2.1 --- Fundamentals of GaAs and AlGaAs --- p.3 / Chapter 2.1.1 --- Crystal structure and properties of GaAs --- p.4 / Chapter 2.1.2 --- General properties of GaAs at 300K --- p.5 / Chapter 2.1.3 --- Temperature dependence of bandgap for GaAs --- p.6 / Chapter 2.1.4 --- Dopants of GaAs --- p.7 / Chapter 2.1.5 --- Properties of AlGaAs --- p.8 / Chapter 2.2 --- Phase Equilibrium of GaAs and AlGaAs --- p.10 / Chapter 2.2.1 --- Phase diagram of Ga-As binary system --- p.11 / Chapter 2.2.2 --- Phase diagram of Al-Ga-As ternary system --- p.13 / Chapter 2.3 --- Principle of LPE growth --- p.17 / Chapter 2.3.1 --- General concept of liquid phase epitaxy --- p.17 / Chapter 2.3.2 --- Fundamental methods of LPE growth --- p.19 / Chapter 2.4 --- Dopants in GaAs and AlGaAs system --- p.21 / Chapter 2.4.1 --- Common dopants in GaAs --- p.22 / Chapter 2.4.2 --- Tellurium in GaAs --- p.23 / Chapter 2.4.3 --- Silicon in GaAs --- p.24 / Chapter 2.4.4 --- Tellurium and Tin in AlGaAs --- p.26 / Chapter Chapter 3 --- LPE SYSTEM FOR GaAs AND AlGaAs --- p.28 / Chapter 3.1 --- Basic requirements for horizontal sliding LPE system --- p.30 / Chapter 3.2 --- Cleaning process of the LPE system --- p.37 / Chapter 3.2.1 --- Cleaning procedures of the quartz parts --- p.37 / Chapter 3.2.2 --- Cleaning procedures of the stainless steel tubing --- p.38 / Chapter 3.2.3 --- Cleaning procedures of the graphite boat --- p.39 / Chapter 3.3 --- Final examination for LPE growth --- p.41 / Chapter 3.3.1 --- Examining the sealing of the system --- p.41 / Chapter 3.3.2 --- Examining the palladium hydrogen purifier --- p.41 / Chapter 3.3.2.1 --- Measuring the dew point --- p.41 / Chapter 3.3.2.2 --- Measuring the content of oxygen and nitrogen --- p.42 / Chapter 3.3.3 --- Adjusting and measuring the isothermal zone in the fumace --- p.42 / Chapter 3.3.4 --- Measuring of background impurity --- p.43 / Chapter 3.3.5 --- Inspection of the operating chamber --- p.44 / Chapter Chapter 4 --- EXPERIMENTALS --- p.45 / Chapter 4.1 --- Determination of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.2 --- Calculation of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.3 --- Experimental determination of source melt composition --- p.48 / Chapter 4.4 --- LPE growth method --- p.49 / Chapter 4.5 --- Thickness control of LPE epilayers --- p.49 / Chapter 4.6 --- Experimental procedures --- p.50 / Chapter Chapter 5 --- RESULTS AND DISCUSSIONS --- p.63 / Chapter 5.1 --- Growth condition studies of GaAs --- p.63 / Chapter 5.1.1 --- Experimental --- p.63 / Chapter 5.1.2 --- Phase equilibrium of GaAs in the range of 780 to 840 °C --- p.63 / Chapter 5.1.3 --- Results of undoped GaAs epilayers --- p.67 / Chapter 5.1.4 --- Results of Si doped GaAs epilayers --- p.72 / Chapter 5.2 --- Growth condition studies of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.1 --- Phase equilibrium of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.2 --- Relation between saturation of solution and he flatness of interface between epilayer and substrate --- p.79 / Chapter 5.2.3 --- Determination of composition x in AlxGa1-xAs --- p.82 / Chapter 5.2.4 --- Relation between epilayer thickness and x in AlxGa1-xAs --- p.84 / Chapter 5.3 --- High AlxGa1-xAs with x ´ 0.9 ° at 780 °C --- p.87 / Chapter 5.3.1 --- Deposition rate of high AlxGa1-xAs epilayer versus cooling rate --- p.87 / Chapter 5.3.2 --- Thickness profiles of epilayers versus cooling rate --- p.89 / Chapter 5.3.3 --- Spectroscopic refractive index of high AlxGa1-xAs in the visible light spectrum --- p.94 / Chapter 5.3.4 --- Rocking curves of high AlxGa1-xAs --- p.96 / Chapter 5.4 --- Tellurium doped AlxGa1-xAs with x ranging from 0.1 to 09 --- p.98 / Chapter 5.4.1 --- Carrier concentration versus composition x in AlxGa1-xAs --- p.98 / Chapter 5.4.2 --- Carrier concentration of Al0.3Ga0.7As versus Te mole fraction --- p.100 / Chapter 5.4.3 --- Donor activation energy of Te Versus x in AlxGa1-xAs --- p.102 / Chapter 5.4.4 --- Refractive index of Te doped AlxGa1-xAs at 300K --- p.105 / Chapter 5.4.5 --- Dependence of solubility upon Te doping level --- p.106 / Chapter 5.5 --- Heavily tellurium doped Al0.3Ga0.7As --- p.107 / Chapter 5.5.1 --- Diffractometry study of heavily Te doped Al0.3Ga0.7As --- p.108 / Chapter 5.5.2 --- Morphological studies and interface studies of heavily Te doped Al0.3Ga0.7As --- p.112 / Chapter Chapter 6 --- CONCLUSION --- p.119 / APPENDIX Photoluminance Analysis at room temperature / REFERENCE
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_320551 |
| Date | January 1994 |
| Contributors | Shiu, Clive Hau Ming., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, iv, 122, [8] leaves : ill. (some mounted col.) ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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