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Fabrication of pyramid textures as anti-reflection layer on single crystal silicon solar cell

A simple and high efficient wet etching technique for fabricating pyramid textures on (100) Si wafer is proposed. Conventionally, pyramid textures were formed on Si wafers to reduce reflections using KOH anisotropic etching. Isopropyl Alcohol (IPA) is often added to the solution to abate the bubbling effect caused by hydrogen released form the Si surfaces during reaction. In this study, a metal net with proper opening dimension was used as a shelter to trap the hydrogen from leaving the surfaces of Si, and therefore turns the hydrogen gas into a gas-type etching mask during the anisotropic etching. In this way, pyramid textures with dimensions range from 3µm to 8µm were successfully fabricated. The measured average reflectivity of the texture for incident optical wave length from 400nm to 1000nm is less than 18%.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706107-110247
Date06 July 2007
CreatorsWang, Jung-Shin
ContributorsNai-Jen Cheng, Ju-Tah Tung, Ann-Kuo Chu, Chao-Kuei Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706107-110247
Rightswithheld, Copyright information available at source archive

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