Storage devices based on Multi-Level Cell (MLC) NAND flash can be found in almost all computer systems except rugged, industrial systems; even though MLC is less expensive and more dense than devices based on standard Single-Level Cell (SLC) NAND flash, MLC’s lower write endurance and lower retention has led system designers to avoid using it. This avoidance is unnecessary in many applications which will never come close to the endurance limits. Furthermore, new processes are leading to storage devices with higher write endurance. System designers should review the specific use-model for their systems and can select MLC-based storage devices when warranted. The result is lower system costs without worry of data loss due to write endurance.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/626992 |
| Date | 10 1900 |
| Creators | Budd, Chris |
| Contributors | SMART High Reliability Solutions |
| Publisher | International Foundation for Telemetering |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Proceedings |
| Rights | Copyright © held by the author; distribution rights International Foundation for Telemetering |
| Relation | http://www.telemetry.org/ |
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