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The dependence of E0+£G0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs

Photoreflectance (PR) of surface-intrinsic-n+ type GaAs has been measured for various temperatures, then we can get the energy of E0+£G0 transition in various temperatures. The spectra exhibited many Franz-Keldysh oscillations, when probe beam¡¦s energy is larger than energy gap. Electric field (F) and transition energy can be determined from analyzing the Franz-Keldysh oscillation. Further more we can get the surface¡¦s Fermi level from the dependence of surface¡¦s electric field (Fs) on temperature (T).

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0613103-181401
Date13 June 2003
CreatorsWang, kuan-kuei
ContributorsTing-Chang Chang, Yan-Ten Lu, Dong-Po Wang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613103-181401
Rightswithheld, Copyright information available at source archive

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