The increasing market demand for wideband gap (WBG) power switches has led to heightened competition to increase converter power density, switching frequencies, and reduce form factor, among other factors. However, this technology has also brought about an increase in encounters with electromagnetic interference (EMI), posing significant challenges. Nevertheless, the maturation of power switches has been accompanied by an improvement in gate drive technology aimed at resolving EMI challenges, albeit at a higher component and cost expense. This thesis aims to design, analyze, and implement a recent innovative differential gate driver for a 1.2 kV SiC MOSFET full bridge module. The purpose of this design is to mitigate EMI, improve performance, and reduce the number of filtering elements that are typically required. The investigation into the impact of EMI on electrical systems involves exploring factors such as testing equipment, power supplies, and gate drive layout. Based on these considerations, system and sub-system level analyses are conducted to derive practical design recommendations for implementing the differential gate driver. Three gate drive PCBs are designed and evaluated through extensive double pulse tests (DPTs). Furthermore, continuous switching of the driver presents its own set of challenges that are not apparent during the DPTs, requiring further exploration of low-cost solutions. Finally, a comparison between custom and discrete module solutions employing 1.2 kV SiC MOSFETs is conducted, highlighting the advantages and disadvantages of each approach. The solutions proposed in this work are intended to be extended to other gate drive ICs, with the goal of providing valuable insights and guidelines for EMI suppression and gate driver performance enhancement. / Master of Science / The increasing demand for powerful and efficient electronic devices has led to competition to develop better converters with wideband gap (WBG) power switches. These switches can make electronics work faster and take up less space, but they can also cause electromagnetic interference (EMI) that can be problematic. Despite these challenges, advances in power switch technology have led to improvements in gate drive technology, which can help reduce EMI, albeit, sometimes, at a higher cost. This research aims to design and analyze an innovative differential gate driver for a 1.2 kV SiC MOSFET full bridge module that can help mitigate EMI, improve performance, and reduce the number of required filtering elements. A system-level analysis is conducted to identify critical noise paths and potential solutions in response to poor gate driver performance. Practical design recommendations are provided for implementing a differential gate driver, and three PCB designs are tested and evaluated to showcase the effectiveness of the proposed solutions. The work also includes a comparison between a custom module and discrete module solutions employing 1.2 kV SiC MOSFETs, highlighting the advantages and disadvantages of each approach. The findings are extended to other gate drivers that share similar performance specifications, demonstrating the potential and improvements that can be achieved with the suggested techniques. Overall, the study provides valuable insights and guidelines for EMI suppression and performance enhancement in power electronics systems utilizing differential gate drivers.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/115889 |
| Date | 30 June 2023 |
| Creators | Miranda-Santos, Jesi |
| Contributors | Electrical Engineering, Dimarino, Christina Marie, Li, Qiang, Dong, Dong |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | ETD, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
Page generated in 0.0021 seconds