Abstract
In this thesis, we propose and fabricate a triple recessed multi-gate SOI device that has high transconductance and low series resistance. The SOI device structure has three unique features. First, it uses mesa isolation instead of using conventional LOCOS and trench isolation to avoid the bird¡¦s beak effect in LOCOS isolation and the complexity of digging trench in trench isolation. Second, it combines the rounded and gate recessed structure to reduce the edge effect and lower the source/drain parasitic resistance. Third, it has three surfaces of gate structure that can increase the effective channel width of the device to enhance the current drivability of the device without reducing the packing density of the integrated circuit. From our experiment results the trends of device characteristics exhibits good agreement with the 3 ¡V D simulation results.
According to the simulation results of 3 ¡V D DAVINCI and the measurement results, triple recessed multi-gate SOI MOSFET¡¦s presents four unique characteristics, which are superior to conventional SOI with the same device parameter in deep sub-micrometer regime. First, multi-gate SOI has better short channel effect and drain induce barrier lowing immunity conventional SOI device than conventional SOI device. Second, it has higher transconductance and higher current drive capability. Third, the breakdown voltage is higher than that of conventional SOI device. Fourth, self-heating effect would not increase with current gain increase, triple recessed multi-gate SOI device has better self-heating effect immunity. These four advantages show the triple recessed multi-gate SOI MOSFET¡¦s is suitable for high speed and low power applications along shrink of device dimensions.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720101-164245 |
| Date | 20 July 2001 |
| Creators | Chang, Shih-Chang |
| Contributors | Chia-Hsiung Kao, Jim-Shyan Wang, Yao-Tsung Tsai, Jyi-Tesong Lin |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720101-164245 |
| Rights | not_available, Copyright information available at source archive |
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