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High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2826
Date28 August 2008
CreatorsLu, Nan
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

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