Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Description

Graduation date: 1996

Links & Downloads

1. http://hdl.handle.net/1957/34575

Tags

Epitaxy

Gallium arsenide semiconductors

Additional Fields

Identifer	oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/34575
Date	27 November 1995
Creators	Schulte, Donald W.
Contributors	Arthur, John R.
Source Sets	Oregon State University
Language	en_US
Detected Language	English
Type	Thesis/Dissertation