Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A major active component of switched capacitor circuits is the monolithic operational amplifier(opamp). Because of the relatively poor speed performance of the currently available silicon based technology, such high speed circuits can not be designed. GaAs technology appears to be a promising alternative technology for high speed switched capacitor circuits.
One problem with GaAs is the lack of complementary technology. Until now, most of the design of GaAs analog integrated circuits has been implemented using depletion mode n-MESFETs, where operational amplifiers and switched capacitors have been developed by various groups. This thesis develops the techniques for implementation of analog integrated circuits using complementary GaAs Heterojunction Field Effect Transistors(HFETs). Several operational amplifiers have been designed and their performance studied via simulation. The designs studied predict superior high frequency performance for C-HFETs over conventional GaAs MESFET and Silicon CMOS technology. The opamp designs are currently being implemented at Oregon State University for fabrication in the future. / Graduation date: 1993
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/37042 |
| Date | 31 August 1992 |
| Creators | Gupta, Rakhee |
| Contributors | Goodnick, Stephen M. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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