We analyze experimental evidence of transport through evanescent waves in graphene, reconciling existing experimental data with theory. We propose novel experimental geometries that provide even more compelling evidence of evanescent waves. We investigate the shot noise generated by evanescent modes in graphene for several experimental setups. For two impurity-free graphene strips kept at the Dirac point by gate potentials, separated by a long highly doped region, we find that the Fano factor takes the universal value F=1/4. For a large superlattice consisting of many strips gated to the Dirac point, interspersed among doped regions, we find F=1/(8ln2). These results differ from the value F=1/3 predicted for a disordered metal, providing an unambiguous experimental signature of evanescent mode transport in graphene. For a graphene nano-ribbon transistor geometry, we explain that the experimentally observed anomalous voltage scale of the shot noise can arise from doping by the contacts to the electrical circuit. These observations provide strong evidence of evanescent mode transport in graphene.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/47737 |
| Date | 20 December 2012 |
| Creators | Wiener, Alexander David |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Dissertation |
Page generated in 0.0021 seconds