We analyze experimental evidence of transport through evanescent waves in graphene, reconciling existing experimental data with theory. We propose novel experimental geometries that provide even more compelling evidence of evanescent waves. We investigate the shot noise generated by evanescent modes in graphene for several experimental setups. For two impurity-free graphene strips kept at the Dirac point by gate potentials, separated by a long highly doped region, we find that the Fano factor takes the universal value F=1/4. For a large superlattice consisting of many strips gated to the Dirac point, interspersed among doped regions, we find F=1/(8ln2). These results differ from the value F=1/3 predicted for a disordered metal, providing an unambiguous experimental signature of evanescent mode transport in graphene. For a graphene nano-ribbon transistor geometry, we explain that the experimentally observed anomalous voltage scale of the shot noise can arise from doping by the contacts to the electrical circuit. These observations provide strong evidence of evanescent mode transport in graphene.

abstract: In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET. / Dissertation/Thesis / Ph.D. Electrical Engineering 2011

Les plasmons polaritons de surface (SPPs) jouent un rôle central en nanophotonique, parce que ce sont des modes optiques qui peuvent être confinés dans l’espace à l’échelle de 10 nm et dans le temps à l’échelle de 10 fs. L’excitation électrique des plasmons polaritons de surface par effet tunnel inélastique peut être ultrarapide et localisée, ce qui permet de développer une nanosource pour la nanophotonique intégrée en profitant pleinement du potentiel des polaritons plasmon de surface. Pourtant, ce processus est très inefficace avec un rendement de conversion typique de 10-7~10-5 plasmon par électron.Dans ce manuscrit de thèse, nous présentons une étude théorique et expérimentale qui vise à augmenter l’émission de plasmons de surface par effet tunnel inélastique avec une nano-antenne résonante. Nous avons développé un modèle théorique pour décrire l’émission de lumière à partir d’une jonction à effet tunnel en utilisant le théorème de fluctuation-dissipation. Nous proposons deux stratégies pour augmenter le rendement de conversion électron-plasmon. Nous introduisons un mode d’antenne résonnante confiné à l’échelle du nanomètre afin de renforcer le couplage entre le courant et le champ. En outre, nous introduisons l’hybridation d’un mode plasmonique metal/isolant/metal confiné et d’un mode d’antenne. Nous prédisons théoriquement que 30% de l’énergie émise par un dipôle est sous forme de SPP pour une longueur d’onde de travail de 800nm et une épaisseur d’isolant de 1 nm.Nous avons développé les processus de fabrication pour réaliser les antennes à effet tunnel en utilisant la configuration Al/AlOx/Au. L’antenne fabriquée présente une fonctionnalité robuste concernant les propriétés électriques et optiques. Nous montrons l’antenne permet de contrôler le spectre d’émission SPP, la polarisation d’émission SPP et renforcer l’efficacité des émissions de SPP de plus de 3 ordres de grandeur. La puissance totale émise sous forme de SPP est de l’ordre de 10 pW, quatre ordres de grandeur de plus que la puissance typique émise par une pointe de microscope à effet tunnel. / Surface plasmon polaritons (SPPs) plays a central role in nanophotonics because they are optical modes that can be confined in space at the 10 nm scale and in time at the 10 fs scale. Electrical excitation of surface plasmon polaritons by inelastic tunneling electrons has the potential to be fast and localized so that it offers the opportunity to develop a nanosource for on-chip nanophotonics taking advantage of the full potential of surface plasmons polaritons. However, inelastic tunneling is rather inefficient with a typical electron-to-plasmon conversion efficiency of 10-7~10-5. In this thesis manuscript, we present a study for enhancing surface plasmon emission by inelastic tunneling electrons with a resonant nanoantenna. It consists of theoretical and experimental investigations. First, we have developed a theoretical model to describe the light emission from a tunnel junction based on the fluctuation-dissipation theorem. Second, we have theoretically demonstrated two strategies to improve the antenna SPP efficiency thus aiming to enhance electron-to-plasmon conversion efficiency. We introduce a resonant antenna mode with a sub-nanometer gap in order to enhance the coupling between the inelastic current and the the mode. Furthermore, we introduce the hybridization in a nanopatch antenna between a gap mode and an antenna mode to launch SPPs: we theoretically predict that 30% of the power emitted by a dipole is converted into SPP (working wavelength at 800nm) with a 1nm gap thickness. Third, we have developed the fabrication procedures to realize antenna tunnel junctions based on the Al/AlOx/Au configuration. The fabricated antenna junction shows a robust functionality both regarding electrical and optical properties. The antenna junction is demonstrated to control the SPP emission spectrum, the SPP emission polarization and enhance the SPP emission efficiency by over 3 orders of magnitude. The total SPP power emitted is in the range of 10 pW, four orders of magnitude larger than the typical fW power emitted by a scanning tunneling tip junction.

Exploiter des effets dépendants du temps pour induire et contrôler des courants à travers des conducteurs mésoscopiques et nanoscopiques est un enjeu majeur dans le domaine du transport quantique. Dans cette thèse, nous considérons deux systèmes de taille nanométrique pour lesquels un courant est induit grâce au couplage entre champs extérieurs dépendants du temps et le transport d'électrons. Nous étudions d'abord un problème de pompage quantique au sein d'un système à trois sites en configuration d'anneau, en considérant la possibilité d'induire un courant continu par modulation temporelle des paramètres de contrôle. Nous nous intéressons en particulier à la transition entre régime adiabatique et antiadiabatique en présence d'un mécanisme de dissipation modélisé par un couplage entre le système et un bain extérieur.Nous montrons que le modèle dissipatif admet une solution analytique complète valable pour la composante DC du courant à fréquence arbitraire. Ceci nous permet de bien comprendre comment le courant induit dépend de la fréquence de pompage. Nous nous concentrons ensuite sur un autre système de contrôle du courant exploitant le phénomène des oscillations tunnel à un électron (SETOs). Contrairement au cas précédent, ici la circulation d'un courant continu à travers un circuit comportant une jonction tunnel produit, pour le régime approprié, un courant quasi-périodique d'électrons. On étudie le spectre de bruit à température nulle d'une jonction tunnel dans différents environnements résistifs dans le but de déterminer les limites du régime des SETOs et de quantifier leur degré de périodicité. Nous généralisons par la suite les résultats à température finie et discutons des effets des fluctuations quantiques. / Exploiting time-dependent effects to induce and control currents through mesoscopic and nano\-scopic conductors is a major challenge in the field of quantum transport. In this dissertation we consider two nanoscale systems in which a current can be induced through intriguing mechanisms of coupling between excitations by external fields and electron transport.We first study a quantum pumping problem, analyzing the possibility to induce a DC response to an AC parametric driving through a three-site system in a ring configuration. We are interested in particular in the crossover between adiabatic and antiadiabatic driving regimes and in the presence of dissipation, which is accounted for by coupling with an external bath. We show that for a clever choice of this coupling the dissipative model admits a full analytical solution for the steady state current valid at arbitrary frequency, which allows us to fully understand the pumping-frequency dependence of the induced current. We then focus on a different current-controlling scheme exploiting the phenomenon of single-electron tunneling oscillations (SETOs). In this case, opposite to what happens for pumping, an AC effect, an almost periodic current of single electrons, arises through a tunnel junction circuit as a consequence of a DC bias. We study the zero-temperature noise spectrum of a tunnel junction in different resistive environments with the aim to determine the boundaries of the SETOs regime and quantify their quality in terms of periodicity. We then discuss the finite-temperature generalization and the possibility to account for the effects of quantum fluctuations.