Noise and linearity are the two key concerns in RF transceiver systems. However, the impact of circuit topology and device technology on systems noise and linearity behaviors is poorly understood because of the complexity and diversity involved. There are two general questions that are addressed by the RF device and circuit designers: for a given device technology, how best to optimize the circuit topology; and for a given circuit topology, how best to optimize the device technology to improve the noise and linearity performance.
In this dissertation, a systematic noise and linearity calculation method is proposed. This approach offers simple and analytical solutions to optimize the noise and linearity characteristics of integrated circuits. Supported by this approach, the physics of state-of-the-art SiGe HBT technology devices can be decoupled and studied. The corresponding impact on noise and linearity is investigated. New optimization methodologies for noise and linearity at both the device and circuit level are presented.
In addition, this thesis demonstrates a technique that accurately extracts ac and noise parameters of devices/circuits in the millimeter-wave range. The extraction technique supports and verifies the device/circuit noise analysis from a measurement standpoint.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/6980 |
| Date | 06 January 2005 |
| Creators | Liang, Qingqing |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Language | en_US |
| Detected Language | English |
| Type | Dissertation |
| Format | 1225266 bytes, application/pdf |
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