High performance InP-based HEMTs with dry etched gate recess /

Description

Diss. no. 12900 techn. sc. SFIT Zurich. / Literaturverz.

Links & Downloads

1. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12900

Tags

HEMT Indiumphosphid Ionenstrahlätzen

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/636662130
Date	January 1998
Creators	Duran, Halit C. Duran, Halit Celâleddin.
Publisher	[S.l.] : [s.n.],
Source Sets	OCLC
Language	English
Detected Language	English
Source	Zugriff über: http://e-collection.ethbib.ethz.ch/show?type=diss&nr=12900