Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, there is still a vast room and expectations in its yet unachieved findings. In present work the GaN technology is explored and state-of-the-art studies of GaN based HEMTs and their application in MMICs are presented. Different designs are presented and evaluated and the results are reported. In particular the HEMT performance is studied in terms of DC in addition to large signal conditions, where the device’s performance becomes function of power levels it is driven with. The peculiarities and challenges of building an automated Load-Pull setup are outlined and analysis for further improvements is presented.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:hig-3085 |
| Date | January 2008 |
| Creators | Aroshvili, Giorgi |
| Publisher | Högskolan i Gävle, Institutionen för teknik och byggd miljö |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, info:eu-repo/semantics/masterThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
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