Gallium nitride templates and its related materials for electronic and photonic devices

Description

QC 20100623

Links & Downloads

1. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4759
2. urn:isbn:978-91-7178-981-5

Tags

GaN

heteroepitaxy of GaN

BGaAlN

Fe doped GaN

HEMT

carrier capture cross section

intersubband transition modulator

Materials science

Teknisk materialvetenskap

Additional Fields

Identifer	oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:kth-4759
Date	January 2008
Creators	Aggerstam, Thomas
Publisher	KTH, Mikroelektronik och tillämpad fysik, MAP, Stockholm : KTH
Source Sets	DiVA Archive at Upsalla University
Language	English
Detected Language	English
Type	Doctoral thesis, comprehensive summary, info:eu-repo/semantics/doctoralThesis, text
Format	application/pdf
Rights	info:eu-repo/semantics/openAccess
Relation	Trita-ICT/MAP AVH, 1653-7610 ; 2008:8