This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/45959 |
| Date | 13 November 2012 |
| Creators | Lourenco, Nelson Estacio |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Thesis |
Page generated in 0.0022 seconds