Return to search

High Dielectric Constant Nickel-doped Titanium Oxide Films by Liquid Phase Deposition

In this study, the characteristics of Nickel-doped LPD-TiO2 films on silicon substrate were investigated. In our experiment, we do some measurement about physical, chemical and electrical properties for undoped and Nickel-doped LPD-TiO2 films and discussed with them. The TiO2 film thickness was characterized by field emission scanning electron microscopy ( FE-SEM ), structure was characterized by X-ray diffraction (XRD), chemical properties was characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and electrical properties was characterized by leakage current: current-voltage (B1500A) and dielectric constant: capacitance-voltage (4980A). For the electrical property improvements, we investigated the Ni-doped LPD-TiO2 films by the post-anneal treatments in nitrogen, oxygen and nitrous oxide ambient.
For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0811111-161216
Date11 August 2011
CreatorsChiu, Shih-chen
ContributorsKuo-mei Chen, Yu-hao Yang, Jeng Gong, Ming-kwei Lee, Chung-cheng Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811111-161216
Rightsuser_define, Copyright information available at source archive

Page generated in 0.0021 seconds