Carrier and lattice relaxation after optical excitation is simulated for the prototypical
wide-bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons,
holes as well as longitudinal-optic (LO), transverse-optic (TO) and acoustic phonons are
distinguished. Carrier-LO-phonon interaction constitutes the dominant energy-loss channel as
expected for polar semiconductors and hot-phonon effects are observed for strong optical
excitation. Our results support the findings of recent time-resolved optical spectroscopy
experiments.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85136 |
| Date | 03 May 2023 |
| Creators | Herrfurth, Oliver, Krüger, E., Blaurock, S., Krautscheid, H., Grundmann, Marius |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 1361-648X, 205701 |
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