IDDQ testing is one of the most effective methods for detecting defects in integrated
circuits. Higher leakage currents in more advanced semiconductor technologies have
reduced the resolution of IDDQ test. One solution is to use built-in current sensors. Several
sensor techniques for measuring the current based on the magnetic field or voltage drop
across the supply line have been proposed. In this work, we develop a behavioral model
for a built-in current sensor measuring voltage drop and use this model to better
understand sensor operation, identify the effect of different parameters on sensor
resolution, and suggest design modifications to improve future sensor performance.
| Identifer | oai:union.ndltd.org:tamu.edu/oai:repository.tamu.edu:1969.1/ETD-TAMU-2009-08-7097 |
| Date | 14 January 2010 |
| Creators | Gharaibeh, Ammar |
| Contributors | (Hank) Walker, Duncan M., Hu, Jiang |
| Source Sets | Texas A and M University |
| Language | en_US |
| Detected Language | English |
| Type | Book, Thesis, Electronic Thesis |
| Format | application/pdf |
Page generated in 0.0021 seconds