We will add AlN and InN powder in order to change the post annealing environment. We want to understand the quality and optical properties of InGaN/GaN quantum well undergoing post annealing.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0620102-123716 |
| Date | 20 June 2002 |
| Creators | Shen, Yu-Ling |
| Contributors | none, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620102-123716 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.002 seconds