by Ng Po Yin. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 57-59). / by Ng Po Yin. / Acknowledgments --- p.I / Abstract --- p.II / Table of contents --- p.III / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Interest in ZnxCd1-xSe/InP --- p.1 / Chapter 1.2 --- Our work --- p.2 / Chapter 1.3 --- Usefulness of PL --- p.4 / Chapter 1.4 --- Growth conditions of ZnSe/GaAs and ZnxCd1-x/InP --- p.4 / Chapter 1.5 --- Purposes of studying ZnSe/GaAs --- p.5 / Chapter 1.6 --- Inhomogeneity of ZnxCd1-xSe/InP --- p.5 / Chapter Chapter 2 --- Experimental setup and procedures --- p.7 / Chapter 2.1 --- Experimental setup --- p.7 / Chapter 2.2 --- Measurements performed --- p.10 / Chapter 2.3 --- Experimental procedures --- p.10 / Chapter Chapter 3 --- Results and discussion --- p.12 / Chapter 3.1 --- RT and 9K PL of ZnSe/GaAs --- p.12 / Chapter 3.2 --- "Excitation power density dependent, RT and 9K PL of ZnxCd1-xSe/InP" --- p.20 / Chapter 3.3 --- Temperature dependent PL of ZnSe/GaAs and ZnxCd1-xSe/InP --- p.45 / Chapter Chapter 4 --- Conclusions and future work --- p.55 / References --- p.57
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321470 |
| Date | January 1996 |
| Contributors | Ng, Po Yin., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, iii, 59 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
Page generated in 0.0021 seconds