Physical damage and damage removal on indium phosphide and gallium arsenide surfaces using low energy ions. / Physical damage and damage removal on InP and GaAs surfaces using low energy ions / CUHK electronic theses & dissertations collection

Description

Thesis (Ph.D.)--Chinese University of Hong Kong ,2001. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Links & Downloads

1. cuhk:343062
2. http://library.cuhk.edu.hk/record=b6073327
3. http://repository.lib.cuhk.edu.hk/en/item/cuhk-343062

Tags

Semiconductors--Surfaces

Indium Phosphide

Gallium arsenide semiconductors

Ion bombardment

Additional Fields

Identifer	oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_343062
Date	January 2001
Contributors	Zhao, Qing., Chinese University of Hong Kong Graduate School. Division of Chemistry.
Source Sets	The Chinese University of Hong Kong
Language	English, Chinese
Detected Language	English
Type	Text, bibliography
Format	electronic resource, electronic resource, remote, 1 online resource (xviii, 146 p. : ill.)
Rights	Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)