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Charge transport study of InGaAs two-color QWIPs

Approved for public release, distribution is unlimited / In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements. / Civilian, Department of Air Force

Identiferoai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1574
Date06 1900
CreatorsHoang, Vu Dinh
ContributorsHaegel, Nancy M., Powers, John P., Department of Electrical and Computer Engineering
PublisherMonterey California. Naval Postgraduate School
Source SetsNaval Postgraduate School
Detected LanguageEnglish
TypeThesis
Formatxvi, 55 p. : ill. (some col.), application/pdf
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, may not be copyrighted.

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