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The Time-resolved Photoluminescence study of Zn 1-x Cd x Se epilayer and ZnSe/Zn 0.91Cd0.09Se MQW

Abstract¡G
We measured time-resolved PL of Zn1-XCdXSe epilayer and ZnSe/Zn0.91Cd0.09Se MQW by Upconversion experiment. The Zn1-XCdXSe epilayer was growth with four kind of Cadmium compositions (X=0.08¡B0.32¡B0.60 and 0.84). The thickness of the Zn1-XCdXSe epilayer is around 0.5£gm. The ZnSe/Zn0.91Cd0.09Se MQW of well width thickness varies from 5nm¡B10nm¡B15nm to 20nm . From carrier recombination mechanism ,We get the two sample relative temperature dependence of radiative¡Bnonradiative recombination lifetime and quantum efficiency , From nonradiative recombination lifetime formula , we can get trap concentration and capture cross section. At low temperature the two samples recombination process is dominated by radiative recombination process. The two samples increase nonradiative recombination process and decrease quantum efficiency with increasing temperature. At high temperature the two samples recombination process is dominated by nonradiative recombination process.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0624103-134454
Date24 June 2003
CreatorsLin, Chung-Sung
ContributorsI-Min Jiang, De-Jun Jang, Li-Wei Tu, Chie-Tong Kuo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624103-134454
Rightsunrestricted, Copyright information available at source archive

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