In this study, we deposit titanium dioxide (TiO2) as gate oxide on thin film transistor (TFT) by liquid phase deposition (LPD) on the amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) substrates. After depositing LPD-TiO2 film, we use to fabricate TFT device.
In our experiment, we do some measurement about physical, chemical and electrical properties for LPD-TiO2 film and discussed with them. the TiO2 film morphology and thickness was characterized by scanning electron microscopy ( SEM ), structure was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and chemical properties was characterized by X-ray photoelectron spectroscopy (XPS),and electrical properties was characterized by leakage current: current-voltage (B1500A) and dielectric constant: capacitance-voltage (E4280A).
In TFT device study, we complete measurement about physical, chemical and electrical properties for LPD-TiO2 films. The LPD-TiO2 film was used as TFT device,
We complete mask manufacture, mesa structure definition, deposit TiO2 thin film, gate definition, photolithography and ICP- etching. Ion implantation is carrying out.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0805109-221112 |
| Date | 05 August 2009 |
| Creators | Yang, Tsai-feng |
| Contributors | yu-hao Yang, Chien-Jung Huang, Ming-Kwei Lee, Chung-Cheng Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805109-221112 |
| Rights | withheld, Copyright information available at source archive |
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