In this thesis, we propose a new fabrication and process solution with discontinuous insulated buried TFT (thin film transistor), it can dissolve ¡§self-heating effect¡¨ and ¡§floating body effect¡¨. A conventional SOI (silicon-on-insulator) device has serious ¡§self-heating effect¡¨ due to a wholly isolated buried layer, and ¡§floating body effect¡¨ will cause device breakdown early and produce ¡§kink effect¡¨. Along with device miniaturization, SOI faces more and more issues, so we announce a new fabrication and process solution with discontinuous insulated buried TFT (thin film transistor), all kinds of discontinuous isolated layer tech are concerned to form ¡§pass way¡¨, means ¡§heating dissipated channel¡¨. It can guide heat in active region to aligned substrate directly. So ¡§self-heating effect¡¨ and ¡§floating body effect¡¨ are suppressed efficiently, and such discontinuous isolated layer tech can also promise many different constructional structures. We approve such creation is better than SOI device in thermal-guidance through ISE TCAD 10.0 simulated tool. Device fabrication is completed in NDL (national device laboratory) and verify it¡¦s feasibility there, the lower cost is also confirmed, we try a new concept, if SOI device can overcome device miniaturization, the ¡§self-heating effect¡¨ and ¡§floating body effect¡¨ cannot be suppressed well, than importing the discontinuous insulated buried TFT will give a possibility to endorse ¡§Moore¡¦s Law¡¨.

In this thesis, a bottom gate TFT with source/drain tied (S/D-tied) device is realized. Because the conventional bottom gate device has serious ¡§self-heating effect¡¨due to the burrier-oxide insulator, the heat produced in the channel is unable to disperse. These non-idea effects will decrease device reliability. In order to improve this self-heating effect for the conventional bottom-gate device, we present a new non-classical architecture called the bottom gate TFT with S/D-tied to achieve enhanced device reliability. In addition, this bottom-gate MOSFET with source/drain tied (S/D-tied) device has the advantages inherently possessed by partially depleted and fully depleted silicon on insulator device. It includes not only the decreases of the source/drain series resistance but also the free of the floating body effect. Besides, to reduce Miller¡¦s capacitance effect we formed an enough-thickness spacers at both sides of the bottom gate and let the source and the drain region do not close nearly.Because the conventional bottom gate device has serious ¡§self-heating effect¡¨due to the burrier-oxide insulator, the heat produced in the channel is unable to disperse. These non-idea effects will decrease device reliability. In order to improve this self-heating effect for the conventional bottom-gate device, we present a new non-classical architecture called the bottom gate TFT with S/D-tied to achieve enhanced device reliability. In addition, this bottom-gate MOSFET with source/drain tied (S/D-tied) device has the advantages inherently possessed by partially depleted and fully depleted silicon on insulator device. It includes not only the decreases of the source/drain series resistance but also the free of the floating body effect. Besides, to reduce Miller¡¦s capacitance effect we formed an enough-thickness spacers at both sides of the bottom gate and let the source and the drain region do not close nearly.

Amorphous silicon thin film transistor(a-Si TFT) and poly silicon thin film transistor(p-Si TFT) have already been used for making the plain switch of picture of the liquid crystal display, especially that amorphous silicon thin film transistor has been widely applied in the large area display panel. And the traditional display would be replaced by flexible display for the convenience. When the a-Si TFT device is operated for a long time, the temperature of the device will increase thereupon, t is very important to probe into the change of the reliability in different temperature, in addition, flexible display should bear the extra mechanical stress. In view of this, we will research the reliability and electrical analyses of a-Si:H Thin Film Transistor under mechanical strain and varied temperature. The result shows that the degradation of reliability of a-Si TFT under direct current is more serious than that of alternating current. , And we use the change of density of state (DOS) to probe the mechanism. Because the active energy varies with the DOS, we measured the device at different temperature to get the active energy (Ea) to confirm the main degradation mechanism for a-Si TFT. In order to investigate the relationship of degradation and temperature, we stressed the device at low temperature (77K), room temperature (300K), and high temperature (400K), respectively.The result shows that the degradation is more serious at high temperature due to the higher energy of the carriers. And we also found that the degradation of a-Si TFT under tensile bending is more serious than flatting, especially in alternating current stress. Thus, under bending condition the degradation mechanisms are dependent on frequency and different with flat condition.

Transparent Ino (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity and X-ray diffraction pattern of the films prepared at sputtering power of 40W¡Bgas pressure of 1.5mTorr , and different oxygen partial pressures were investigated . At a 50% oxygen partial pressure , the resistivity of the films is 4.7¡Ñ104 £[-cm . Indium tin oxide (ITO) and silicon nitride (SiNx) thin films are used as the electrode and gate insulator . The resistivity of ITO electrodes is 7¡Ñ10-4 £[-cm .On the other hand , the maximum leakage current of less than 1¡Ñ10-10A/cm2 was obtained for the SiNx layer at an electric field of 1 MV/cm . Sputtering power is changed from 40W to 60W at the situation of gas pressure of 1.5mTorr and oxygen partial pressures of 50% . When sputtering power is 50W , the measured saturation mobility , threshold voltage , on/off ratio and subthreshold swing are 3 cm2v-1s-1 , 3V , 1.7¡Ñ106 and 1.34 V/decade , respectively for a 20£gm channel length Ino TFT .

我國TFT-LCD產業發展現階段已開始投入第六代、第七代的投資設廠，並在民國90年創下出貨量近四千萬片的佳績，在全球佔有率達40%，表現搶眼亮麗。加上TFT-LCD產業為我國政府大力支持的「兩兆雙星」的主要產業之一，相信該產業的發展成長將對於我國經濟產生深遠影響。過去研究多半針對TFT-LCD產業從競爭策略、關鍵零組件分析等構面，來對該產業或是個案公司進行經營策略上的建議，而本研究則針對台灣TFT-LCD產業中的公司進行價值上的因子分析，希望藉由拆解各個財務性因子來了解影響其產業公司價值的主要因素。 我們主要探討的是重大影響整體產業股價評價的本益比（P/E）與股價淨值比（P/B）的關鍵影響因子為何。依照營運面及盈餘面，分別列出三個主要影響股價的價值因子；在營運面部分，我們選擇再投資率、銷貨利潤率以及投入資本週轉倍數，而在盈餘面部分，則選擇銷售成長率、利潤率及總投資率來檢測，想要發現其影響較為重大的價值因子，以提供未來股價評價資訊因子的參考性。結果發現在盈餘面的再投資率是影響該產業及個案公司間相對股價表現較為重要的因素，值得多加觀察其變動狀況。

The photoelectricity industry is vigorous development industry of all the world in the recent 10 years. Especially, TFT - LCD flat panel industry will have the richly potential development in the future and the market output value scale is huge after the semiconductor industry. Therefore becomes the star industry. The Japanese creates thought that, the South Korean enhances the huge scale in the market, the Taiwan person makes the small advantage. Besides semiconductor technology, TFT - LCD covers the technology which is included optics domain and up and down material supply chains are widespread. In recent years because every TFT - the LCD industry one after another expanded production capacity that caused the price rapidly to glide down, therefore industry must face the compression to make a profit . How to survive in the severe environment competition and how to utilize the effective strategy for various merchants? This research mainly applies the theory construction of Michael Porter's Five Forces Model and diamond Model to become the analytic tools. To find oneself competition strategy direction , we must discuss the different advantage and inferiority of the global LCD TV flat panel industry in the competition strategy to make the analysis comparison to the Taiwan industry by the above tool. TFT - LCD development until now, whose technology has strictly complete mature periods and had entered the mature period. Then TFT - LCD flat panel industry steps and develops greater size. At the same time the industry must face the existing competitor, also must face the potential competitor under this kind of severe environment and face more test. Taiwan TFT - LCD industry must develop the below strategy to be able to maintain the long-time competitive advantage: 1¡Bproduct line strategy 2¡Bmanufacture strategy 3¡Binternational market access strategy 4¡Bcustomer relations strategy 5¡Bcost competition strategy 6¡Bnew technical research and development strategy Above-mentioned had the detailed narrations and explanation in the fifth chapter, and the final research will become the reference key of Taiwan TFT - LCD industry next competition strategy. Keyword:Thin Film Transistor-Liquid Crystal Display Five Forces Model,SWOT Analysis,Diamond Model.

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This research mainly discusses about Taiwan plane liquid-crystal display industry, whether Taiwan companies can break through the tough circumstance, and becomes the world biggest supply country in the future. takes a broad view now the large-scale TFT-LCD industry and the product nearly concentrates in Asian area, in South Korea, Taiwan and Japan, but Taiwan's superiority lies in the investment cost to be lower, compares Japan gradually not to have the production competitive ability, in under all sorts of superiority coordination, the Taiwan large-scale TFT-LCD industry indeed has the development the space. Take the present Taiwan's industrial present situation gradually by the high tech industry as a mainstream, this research utilization strategy management methodology, the analysis at present Taiwan large-scale TFT-LCD industry present situation as well as the future will possibly face the challenge will do for the demand, will analyze the situation condition type using the life cycle theory as well as the BCG matrix which the Taiwan large-scale TFT-LCD industry will locate, as well as will analyze using SWOT understood the Taiwan large-scale TFT-LCD industry the competition superior inferiority. Future the Taiwan large-scale TFT-LCD industry in the whole world market share, hoped for under the penetration government support, diligently trains the specialized talented person, as well as the innovation product, promotes the Taiwan innate brand the establishment, but the strategy plan may use the horizontal conformity and the vertical conformity method achieved each merchant the merge brings the synthesis effect as well as supplies the chain the integrity, these policies necessary measures must conform to Taiwan at present the merchant demand, only then cannot create the negative effect which the strategy improper brings. Faced with the capital structure more formidable South Korea merchant, Taiwan must positively expand the next generation surface lumber yard to be able effectively to assault the global market, also will be Taiwan future the road which must be taken, but whether could be a return avenue still does not need in the future slowly the observation and the discovery. But the present LCD-TV market has not been still developed, also was the Taiwan large-scale TFT-LCD industry military commander land that must fight for, we thought also will be a future most essential machine office in, hoped Taiwan the high tech industry will be allowed smoothly to lead Taiwan in under the plane liquid-crystal display industry impetus to move towards the globalization the goal.

Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7¡Ñ104 £[-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7¡Ñ10-4 £[-cm and 85%. On the other hand, the maximum leakage current of less than 1¡Ñ10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm. For a 20£gm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3¡Ñ106 and 1.56 V/decade, respectively.

The influence of grain boundary (GB) on stability of poly-silicon thin film transistor (TFT) have been investigated in this work. The work was supported by the National Science Council of the Republic of China and AUO. We used ac stress and dc stress conditions to stress different TFTs, and investigate the influence of grain boundary by use of electrical analysis. The SLS poly-Si TFT which does contain GB perpendicular to the channel direction owns the higher ability against dc stress and poorer ability against ac stress than the poly-Si TFT which does not contain GB. The physical mechanism for these results has been reasonably deduced by use of TFT device simulation tool (ise-tcad).