Transparent Ino (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature
were demonstrated. The resistivity and X-ray diffraction pattern of the films prepared at sputtering power of 40W¡Bgas pressure of 1.5mTorr , and different oxygen partial pressures were investigated . At a 50% oxygen partial pressure , the resistivity of the films is 4.7¡Ñ104 £[-cm . Indium tin oxide (ITO) and silicon nitride (SiNx) thin films are used as the electrode and gate insulator . The resistivity of ITO electrodes is 7¡Ñ10-4 £[-cm .On the other hand , the maximum leakage current of less than 1¡Ñ10-10A/cm2 was obtained for the SiNx layer at an electric field of 1 MV/cm .
Sputtering power is changed from 40W to 60W at the situation of gas pressure of 1.5mTorr and oxygen partial pressures of 50% . When sputtering power is 50W , the measured saturation mobility , threshold voltage , on/off ratio and subthreshold swing are 3 cm2v-1s-1 , 3V , 1.7¡Ñ106 and 1.34 V/decade , respectively for a 20£gm channel length Ino TFT .
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1010108-140500 |
| Date | 10 October 2008 |
| Creators | Huang, Jhih-Sheng |
| Contributors | Tsung-Hsien Lin, Jyi-Tsong Lin, Ju-Tah Tung, Ann-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1010108-140500 |
| Rights | not_available, Copyright information available at source archive |
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