Yes / Much attention has been paid to making 5G developments more en-ergy efficient, especially in view of the need for using high data rates with more complex modulation schemes within a limited bandwidth. The concept of the Doherty power amplifier for improving amplifier efficiency is explained in addi-tion to a case study of a 70W asymmetrical Doherty power Amplifier using two GaN HEMTs transistors with peak power ratings of 45W and 25W. The rationale for this choice of power ratio is discussed. The designed circuit works in the 3.4GHz frequency band with 200 MHz bandwidth. Rogers RO4350B substrate with dielectric constant εr=4.66 and thickness 0.035 mm is used. The perfor-mance analysis of the Doherty power amplifier is simulated using AWR MWO software. The simulated results showed that 54-64% drain efficiency has been achieved at 8 dB back-off within the specified bandwidth with an average gain of 10.7 dB.
| Identifer | oai:union.ndltd.org:BRADFORD/oai:bradscholars.brad.ac.uk:10454/16615 |
| Date | 22 August 2018 |
| Creators | Abdulkhaleq, Ahmed M., Al-Yasir, Yasir I.A., Ojaroudi Parchin, Naser, Brunning, J., McEwan, N., Rayit, A., Abd-Alhameed, Raed, Noras, James M., AbdulJabbar, N. |
| Source Sets | Bradford Scholars |
| Language | English |
| Detected Language | English |
| Type | Conference paper, Accepted manuscript |
| Rights | © 2018 BROADNETS/EAI (European Alliance for Innovation) and the Authors. Reproduced with permission in accordance with the publisher's self-archiving policy. |
| Relation | http://broadnets.org/2018/show/home |
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