Return to search

Extrinsic Doping of Few Layered Tungsten Disulfide Films by Pulsed Laser Deposition

This dissertation tested the hypothesis that pulsed laser deposition (PLD) could be used to create targeted dopant profiles in few layered WS2 films based on congruent evaporation of the target. At the growth temperatures used, 3D Volmer-Weber growth was observed. Increased energy transfer from the PLD plume to the growing films degraded stoichiometry (desorption of sulfur) and mobility. Sulfur vacancies act as donors and produce intrinsic n-type conductivity. Post deposition annealing significantly improved the crystallinity, which was accompanied by a mobility increase from 6.5 to 19.5 cm2/Vs. Preparation conditions that resulted in excess sulfur, possibly in the form of interstitials, resulted in p-type conductivity. Current-voltage studies indicated that Ohmic contacts were governed by surface properties and tunneling. Extrinsic p-type doping of few layered WS2 films with Nb via pulsed laser deposition using ablation targets fabricated from WS2, S and Nb powders is demonstrated. The undoped controls were n-type, and exhibited a Hall mobility of 0.4 cm2/Vs. Films doped at 0.5 and 1.1 atomic percentages niobium were p-type, and characterized by Fermi levels at 0.31 eV and 0.18 eV from the valence band edge. That is, the Fermi level moved closer to the valence band edge with increased doping. With increased Nb doping, the hole concentrations increased from 3.9 x1012 to 8.6 x1013 cm-2, while the mobility decreased from 7.2 to 2.6 cm2/Vs, presumably due to increased ionized impurity scattering. X-ray photoelectron spectroscopy indicates that Nb substitutes on W lattice sites, and the measured peak shifts toward lower binding energy observed corresponded well with the UPS data. Throughout, a clear correlation between degraded stoichiometry and decreased mobility was observed, which indicates that point defect and ionized impurity scattering is a dominant influence on carrier transport in PLD few-layered WS2 films. The approach demonstrates the potential of PLD for targeted doping of transition metal dichalcogenides.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc1538673
Date08 1900
CreatorsRathod, Urmilaben Pradipsinh P
ContributorsShepherd, Nigel D, Voevodin, Andrey, Scharf, Thomas, Philipose, Usha, Du, Jincheng, Mukherjee, Sundeep
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formatx, 101 pages, Text
RightsUse restricted to UNT Community, Rathod, Urmilaben Pradipsinh P, Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved.

Page generated in 0.0022 seconds