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RM³ Processing for In-plane Optical Interconnects on Si-CMOS and the Impact of Topographic Features on Losses in Deposited Dielectric Waveguides

This paper describes recent progress in a continuing program to develop and apply RM³ (recess mounting with monolithic metallization) technologies for heterogeneous integration. Particular emphasis is placed on the applicability of RM³ integration to in-plane geometries for on-chip optical clock and signal distribution and on the suitability of commercially processed IC wafers for use as substrates for rectangular dielectric waveguides. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3963
Date01 1900
CreatorsBarkley, Edward, Fonstad, Clifton G. Jr.
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeArticle
Format354502 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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