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Raman study of LO phonon-plasmon coupled modes dependence on carrier density in Si:InN films

The purpose of this thesis is to find out carrier concentration in nitride semiconductors by micro Raman measurements. We focus on the Raman measurements of two different III-nitride semiconductors doped with Si. First series is narrow band gap InN films with varying carrier concentration (ne). The highest (ne) in this series is 1.9 X 1019 cm-3. The second series is wide band gap GaN films, with highest (ne) of 8.0 X 1019 cm-3.From the room temperature Ramam measurements ,it is observed that the L- LOPCM (lower branch of longitudinal-optical phonon-plasmon coupled modes) depends on the carrier concentration. We focus the further analysis of this result and try to extract the carrier concentration and compare with electrical measurements.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0907109-140728
Date07 September 2009
CreatorsTu, Yi-Chou
ContributorsTsu-Chiang Yen, Quark Chen, Li-We Tu, Min-Hsiung Tsai, Der-Jun Jang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0907109-140728
Rightsnot_available, Copyright information available at source archive

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