Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

Description

We demonstrate that excitons in semiconductor alloys are subject
to competing localization effects due to disorder (random potential fluctuations)
and shallow point defects (impurities). The relative importance of these effects
varies with alloy chemical composition, impurity activation energy as well as
temperature. We evaluate this effect quantitatively for MgxZn1−xO : Al (0 6
x 6 0.058) and find that exciton localization at low (2 K) and high (300 K)
temperatures is dominated by shallow donor impurities and alloy disorder,
respectively.

Links & Downloads

1. urn:nbn:de:bsz:15-qucosa2-801659
2. https://ul.qucosa.de/id/qucosa%3A80165
3. https://ul.qucosa.de/api/qucosa%3A80165/attachment/ATT-0/

Tags

info:eu-repo/classification/ddc/530

ddc:530

Additional Fields

Identifer	oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:80165
Date	26 July 2022
Creators	Dietrich, Christof P., Lange, Mike, Benndorf, Gesa, Lenzner, Jörg, Lorenz, Michael, Grundmann, Marius
Publisher	IOP Publishing
Source Sets	Hochschulschriftenserver (HSSS) der SLUB Dresden
Language	English
Detected Language	English
Type	info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rights	info:eu-repo/semantics/openAccess
Relation	033030