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Requirements and challenges on an alternative indirect integration regime of low-k materials

An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:ch1-qucosa-207219
Date22 July 2016
CreatorsHaase, Micha, Ecke, Ramona, Schulz, Stefan E.
ContributorsTU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik
PublisherUniversitätsbibliothek Chemnitz
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typedoc-type:conferenceObject
Formatapplication/pdf, text/plain, application/zip
SourceAMC 2015 – Advanced Metallization Conference

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