CuInSe2 chalcopyrie compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy system.
Single-crystalline chalcopyrite films can be obtained by the control of substrate temperature,growth rate,and film composiion.
Phase identification and crystalline orientation of CuInSe2:Ge films were examined by x-ray diffractometer.Surface morphology and microstructure were observed by electron miroscopy.Chemical composition was measured by electron probe microanalyzer.Optical and electrical properties were characterized by photoluminescence measurement,photoreflectance measurement,and four-poin probe method.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1124100-192312 |
| Date | 24 November 2000 |
| Creators | Liu, Chih-Hui |
| Contributors | Man-phon Houng, K.Y. Hsieh, Bae-Heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312 |
| Rights | unrestricted, Copyright information available at source archive |
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