In this experiment,we used the solvothermal method that described by Y.Qian et al,to synthesize nano powder which have different morphology.We had demonstrated it that by controlling and changing the temperature,reaction time and washing agents,to control the size and it leads to the change of the energy gap.In others,we changed the ,and used the same method to synthesize CuGaSe2 powder.It was used to improve the efficirncy of the solar cell devices. The synthetic temperature 180¢J and rection time 48hrs are the best condition in nano spherical powder experiment.The synthetic temperature 180¢J and reaction time 42hrsare the best condition in nano rods experiment.The synthetic temperature 210¢J and reation time 24hrs,we synthesize CuGaSe2.And in the kinetic mechanism of nano powder,we think that the second phase is the important factor that influence the growth of nano poweder,and also influence the size of powder.

CuInSe2 chalcopyrie compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy system. Single-crystalline chalcopyrite films can be obtained by the control of substrate temperature,growth rate,and film composiion. Phase identification and crystalline orientation of CuInSe2:Ge films were examined by x-ray diffractometer.Surface morphology and microstructure were observed by electron miroscopy.Chemical composition was measured by electron probe microanalyzer.Optical and electrical properties were characterized by photoluminescence measurement,photoreflectance measurement,and four-poin probe method.

This paper describes an investigation into the fabrication of Al/ZnO:Al/CdS/CuInSe2/Mo/SLG thin-film solar cell. The absorber layer CuInSe2 films deposited by multisource elemental evaporation on Mo-coated soda lime glass at Tss=550¢J. Mo back metal contact and the front metal contact of Al were fabricated by magnetron sputtering. The ~800 Å CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO:Al window layer was grown by RF sputtering. Furthermore, we add Sb into CuInSe2 films to modify surface and grow smother surface of Cu-rich CuInSe2. We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cell with efficiency. The open circuit voltage (Voc) is 0.32 V, the short circuit current (Isc) is 1.62 mA and fill factor (F.F.) is 33 % in our device. The junction ideality factor is h=3.40, it¡¦s meant that recombination current is the dominant current. So, it¡¦s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition.

The dominant research subjects are focused on the growth of high quality stoichiometric undoped CuInSe2 epitaxial films by molecular beam epitaxial growth. For MBE growth, it is possible to obtain the high quality epitaxial films and to get the reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully. Under the conditions of fixed Cu molecular beam flux and excess Se molecular beam flux, we can control the In/Cu compositon ratio by changing In molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films. We hope it can be used in the manufacture of solar cell and get high conversion efficiency.

The dominant research subjects are focused on the growth of high quality stoichiometric of CuInSe2 epitaxial films by chemical electrodeposited. For chemical electrodeposited growth, it is possible to obtain the high economical films and to get easier and quicker of the composition and properties by controlling the growth parameters carefully. Under the conditions of fixed copper ion¡]Cu2+¡^concentration and excess indium ion¡]In3+¡^concentration, we can change selenium¡]Se4+¡^ concentration to get films. We hope it could be used in the manufacture of solar cell and get high conversion efficiency.

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Abstract The objective of this proposed study is to develop the new material CuInSe2 for larger area, low cost and high efficiency commercial CuInSe2 based solar cell for the solar resource in Taiwan. Recently, The¢¹-¢»-¢¾2 ternary chalcopyrite semiconductors, CuMX2(M=In, Ga; X=Se, S) have received considerable potential for nonlinear optics and photovoltaic applications such as a promising material for solar cell. For the request of large area homogeneousness, the electrochemical atomic layer epitaxy (ECALE) and molecular beam epitaxy (MBE) are used to deposit and adjust the composition. The combination of the advantages of MBE and ECALE could produce the large area epitaxial layer and get the precise compositions of CuInSe2 films to obtain a high conversion efficiency for commercial solar cell applications. For the study of large area CuInSe2 substrate, first, the electrochemical atomic layer epitaxy (ECALE) was applied to deposit a layer of CuInSe2 thin film on ITO substrate, and then the physical vapor deposition was applied for the annealing process to adjust the composition wanted. At last, a CuInSe2 epitaxial film was grown on the top of substrate under the MBE process. In addition, under the conditions of fixed In molecular beam flux and excess Se molecular beam flux, we can control the Cu/In composition ratio by changing Cu molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films, and predict the type of conductivity. It could be possible to obtain the high reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully. Finally, We hope it can be used in the manufacture of solar cell and get large area high conversion efficiency.

The objective of this proposed study is to develop the new material CuInSe2 for large area, low cost and high efficiency commercial CuInSe2 based solar cell for the solar resource in Taiwan. The compositions of CuInSe2 films are modulated precisely to obtain an ideal electrical and optical characteristics resulting in high conversion efficiency for commercial solar cell applications. Numerous experimental investigations have shown the electrical properties of undoped CuInSe2 are dominated by various types of electrically active intrinsic defects caused by the deviations from the ideal stoichiometry. Without any intentional doping CuInSe2 can be made n-type and p-type conducting with carrier concentrations varying over many orders of magnitude either by slightly changing the composition of the material during growth or by appropriate post-growth annealing procedures. Several attempts have been made successfully by the crucial construction and application of intrinsic defect chemistry model to investigate the trend in the conductivity of CuInSe2, however, there investigation still remain no clear evidence to directly correlate composition and electrical properties reported by several authors, and the results of experimental data shows in contradiction to the intrinsic defect model. According to the point defect model, that samples with DX¡Õ0 and larger values of |DY| are always n-type conducting, and sample with DX>0 and DY>0 are always p-type conducting. In addition, as DX<0 and DY<0, the dominant defect pair calculated from the point defect model is VCu and InCu, their concentrations varies as a function of DY. Once DY is relatively more negative, [VCu] increase and that forms [VCu]¡Ö[InCu]. Therefore, the electrical conductivity of CuInSe2 changed from n-type to p-type. The Growth model of MBE is considered to investigate the reactive mechanism of epitaxial growth. At 500¢J, the BEP of In and Cu molecular beam fluxes supplied were 5¡Ñ10-8~5¡Ñ10-7 torr for the MBE growth of CuInSe2 films. The change of Se molecular beam flux not only affect the composition of CuInSe2 films, but also the deviation from molecularity DX and the deviation from valence stoichiometry. As Se molecular beam flux increase to 10-6 torr, the concentrations of dominant defects show to decrease about three orders. Thus, the increase of Se BEP results in increasing the mobility as well as the conductivity. On the whole, this study is based on the simulation to investigate the mechanism of MBE. It could be used to control precisely the composition of CuInSe2 films leading to obtain the electrical characteristics for solar cell design.

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