In this work, we studied the blends of metallic nanoparticle and polymers as a donor/acceptor bulk heterojunction active layer. The mobility of the free charge carriers in thin polymer films is lower, so we blended Pd nanoparticles (Pd NPs) into polymers to improve carrier mobility, and enhance the power conversion efficiency of the polymer solar cell. P3HT was used as a donor material because of its high stability and with high absorption in visible light. PCBM was used as a acceptor material because of its high stability and with high electron transportation. We blended nanoparticles that include different size (5nm and 20nm) and different metal (Pd and Pt) and blended into the P3HT:PCBM active layer, with the device configurations of ITO/PEDOT:PSS/P3HT:PCBM: Pt NPs/Al. Polymer solar cells measured was under AM 1.5G 100mW/cm2 illumination. When we blended Pd NPs and Pt NPs into the active layer, the power conversion efficiency increased from 2.43% to 2.78%. We will study dispersion and characteristic of different size nanoparticles in the active layer.

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A study of fabricating the first electrospun polymer-fiber solar cell with MEHPPV is presented. Motivation for the work and a brief history of solar cell is given. Limiting factors to improvement of polymer solar cell efficiency are illustrated. Electrospinning is introduced as a technique that may increase polymer solar cell efficiency, and a list of advantages in the technique applied to solar cell is discussed. Results of electrospun polymer-fiber solar cell, absorption, and its device parameter diagnosis through an equivalent circuit analysis are presented.

This paper describes an investigation into the fabrication of Al/ZnO:Al/CdS/CuInSe2/Mo/SLG thin-film solar cell. The absorber layer CuInSe2 films deposited by multisource elemental evaporation on Mo-coated soda lime glass at Tss=550¢J. Mo back metal contact and the front metal contact of Al were fabricated by magnetron sputtering. The ~800 Å CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO:Al window layer was grown by RF sputtering. Furthermore, we add Sb into CuInSe2 films to modify surface and grow smother surface of Cu-rich CuInSe2. We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cell with efficiency. The open circuit voltage (Voc) is 0.32 V, the short circuit current (Isc) is 1.62 mA and fill factor (F.F.) is 33 % in our device. The junction ideality factor is h=3.40, it¡¦s meant that recombination current is the dominant current. So, it¡¦s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition.

ITO/Si heterojunction solar cells fabricated by post annealing of ITO films were presented. The cells were obtained by first depositing ITO films at room temperature by rf magnetron sputter technique. The as-deposited film is amorphous and its sheet as low as 35 £[/¡¼ was obtained. The sheet resistance by post annealing the sample in vacuum at 300¢J 20min. reduced to 9.7 £[/¡¼. The diffraction peaks on (222) and (400) directions were observed by XRD analysis. In addition, the carrier concentration is increased from 3¡Ñ1020 cm-3 to 9¡Ñ1020cm-3. The average transmittance is 82% after annealing. The ideality factor of the heterojunction diode is 1.93. We believed that the performance of the ITO/Si cells is limited due to large series resistance and carrier recombination at interface.

The dominant research subjects are focused on the growth of high quality stoichiometric undoped CuInSe2 epitaxial films by molecular beam epitaxial growth. For MBE growth, it is possible to obtain the high quality epitaxial films and to get the reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully. Under the conditions of fixed Cu molecular beam flux and excess Se molecular beam flux, we can control the In/Cu compositon ratio by changing In molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films. We hope it can be used in the manufacture of solar cell and get high conversion efficiency.

The dominant research subjects are focused on the growth of high quality stoichiometric of CuInSe2 epitaxial films by chemical electrodeposited. For chemical electrodeposited growth, it is possible to obtain the high economical films and to get easier and quicker of the composition and properties by controlling the growth parameters carefully. Under the conditions of fixed copper ion¡]Cu2+¡^concentration and excess indium ion¡]In3+¡^concentration, we can change selenium¡]Se4+¡^ concentration to get films. We hope it could be used in the manufacture of solar cell and get high conversion efficiency.

We use molecular beam deposition (MBD) system to grows bi-layers CuInSe2-based thin film solar cell, soda-lime glass as our substrate, cadmium sulfide(CdS) as our buffer layer, zinc oxide(ZnO) as window layer, Mo as back contact metal and using Al as front contact metal. In our device fabrication process, we primary use physical vapor deposition(PVD) to grows thin film in vacuum condition expect Cadmium sulfide. We already fabricate the CdS/CuInSe2-based thin film solar cell successful. Using current-voltage measurement to get fill factor(F.F.) is 39.76%, open circuit voltage(Voc) is 0.26V and short circuit current(Isc) is 2.104mA in our device. It¡¦s so essential to improve every layers properties in order to get higher quantum efficiencies. Especially, resistivity of the zinc oxide window layer is too high and the interface properties between Al and ZnO is not so good. The junction perfection factor is 1.9161, recombination current is the dominate current. So, research and further improve interface characterization between CuInSe2/CdS is necessary.

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This paper describes an investigation into the fabrication of absorber layer CuInSe2 films by co-evaporation process. And we used the stainless steel substrates to manufacture Al / ZnO:Al /ZnSe(CdS) / CuInSe2 / Mo /SiO2 / Stainless Steel(SS) flexible thin-film solar cell. In this study, we fabricated the main absorber layer CIS thin film by co-evaporation process including two steps, and CIS thin films parameters were estimated by sheet resistance. Under one-sun (AM1.5,100mW/cm2) conditions solar simulator, we compared the solar cell with different thickness of absorber layer, co-evaporation process and composition to improve solar cell performance. The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ CdS /CIS/Mo/ SLG) was 4.5¢M(Voc =0.38 V¡AJsc = 30.5 mA ¡AFF = 38.6 ¢M), flexible solar cell (Al/AZO/CdS/CIS/Mo/SiO2/SS) was 2.6%( Voc =0.2 V¡AJsc = 41.7 mA ¡AFF = 31.2 %).